Wenzhou Cynthus Technology Co., Ltd.

中+8613161801490

Si<111>1000±20um Epi：AlGaN/GaN, 5-5.5um
English name: 6 "- Si based GaN EPI Wafer
Scope of application: 6 "GaN production sheet.

Epitaxial Epi

Crystal
1.1 Growing Method	MOCVD
1.2 Orientation	<111> crystal orientation
1.3 thickness	5~5.5um
1.4 Surface coverage/thickness	GaN /2-2.5nm
1.5GaN quality	<600”(002 )
	<1000”(102)
1.6 HEMT component	AlxGal-xN，0.2
1.7 ALN intermediate layer	1-2nm
Electrical
Two-dimensional electron gas concentration of HEMT structure	>8E12/cm²
Mechanical
Diameter	150±0.2mm
Surface Treatment
Crack (Edge 5 mm)	without

Substrate

Surface Treatment
Crack (Edge 5 mm)	without

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