Wenzhou Cynthus Technology Co., Ltd.

Gallium nitride HEMT epitaxial products

·Silicon based gallium nitride LED epitaxial wafers (2 inches, 4 inches, 6 inches, 8 inches)
·D-mode and E-mode
·Breakdown voltage 800V to 1200V
Usage: Mobile RF switch, fast charging, wireless charging, data center, new energy vehicle charging and other fields

Epitaxial Epi

Crystal
1.1 Growing Method	MOCVD
1.2 Orientation	<111> crystal orientation
1.3 thickness	5~5.5um
1.4 Surface coverage/thickness	GaN /2-2.5nm
1.5GaN quality	<600”(002 )
	<1000”(102)
1.6 HEMT component	AlxGal-xN，0.2
1.7 ALN intermediate layer	1-2nm
Electrical
Two-dimensional electron gas concentration of HEMT structure	>8E12/cm²
Mechanical
Diameter	150±0.2mm
Surface Treatment
Crack (Edge 5 mm)	without

Substrate

Surface Treatment
Crack (Edge 5 mm)	without