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Sapphire-based gallium nitride LED epitaxial wafer (2 inches, 4 inches, 6 inches, 8 inches)
Silicon-based gallium nitride LED epitaxial wafer (2 inch, 4 inch, 6 inch, 8 inch)
Uses: Suitable for blue, green and red light, as well as ultraviolet and near-ultraviolet LEDs
| Crystal | |
|---|---|
| Growing Method | MOCVD |
| Orientation | <111> Crystal direction |
| thickness | 5~5.5um |
| 1.4 Surface Covering/Thickness | GaN /2-2.5nm |
| 1.5GaN quality | <600”(002 ) |
| <1000”(102) | |
| 1.6 HEMT component |
AlxGal-xN，0.2 |
| 1.7 ALN middle layer | 1-2nm |
| Electrical | |
| HEMT structure 2D electron gas concentration | >8E12/cm² |
| Mechanical | |
| Diameter | 150±0.2mm |
| Surface treatment | |
| Crack (Edge 5 mmwithin) | without |
| Surface treatment | |
|---|---|
| Crack (Edge 5 mm within) | without |
+8613161801490
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Tel：+8613161801490E-Mail：154330064@qq.com
